Two 10Gb/s/pin low-power interconnect methods for 3D ICs

Qun Gu*, Zhiwei Xu, Jenwel Ko, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

65 Scopus citations

Abstract

Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab 3D 0.18μm CMOS, an 8x improvement over previous work.

Original languageEnglish
Title of host publication2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
DOIs
StatePublished - 27 Sep 2007
Event54th IEEE International Solid-State Circuits Conference, ISSCC 2007 - San Francisco, CA, United States
Duration: 11 Feb 200715 Feb 2007

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference54th IEEE International Solid-State Circuits Conference, ISSCC 2007
CountryUnited States
CitySan Francisco, CA
Period11/02/0715/02/07

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