Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm

G. D. Lee*, Steve S. Chung, A. Y. Mao, W. M. Lin, C. W. Yang, Y. S. Hsieh, K. T. Chu, L. W. Cheng, H. Tai, L. T. Hsu, C. R. Lee, H. L. Meng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

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Engineering & Materials Science