Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm

G. D. Lee*, Steve S. Chung, A. Y. Mao, W. M. Lin, C. W. Yang, Y. S. Hsieh, K. T. Chu, L. W. Cheng, H. Tai, L. T. Hsu, C. R. Lee, H. L. Meng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a new twin gated-diode (T-GD) method has been greatly improved for the oxide interface characterization of MOS devices with gate oxide as thin as 1nm (EOT), With the scaling of gate oxide thickness into 1nm regime, reported GD measurement can not give correct measurement due to gate tunneling leakage current. Here, we provide a simple method to remove this limitation. This method has been demonstrated successfully for the ultra-thin (EOT= 10.2Å) gate oxide nMOSFET devices. Application of the method to the PBTI effects of high-k gate dielectric devices has been demonstrated. It was found that high-K device has worse gate oxide quality, but its interface damage is less than that of control oxide.

Original languageEnglish
Title of host publicationProceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages37-40
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore
Duration: 3 Jul 20067 Jul 2006

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
CountrySingapore
CitySingapore
Period3/07/067/07/06

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  • Cite this

    Lee, G. D., Chung, S. S., Mao, A. Y., Lin, W. M., Yang, C. W., Hsieh, Y. S., Chu, K. T., Cheng, L. W., Tai, H., Hsu, L. T., Lee, C. R., Meng, H. L., Tsai, C. T., Ma, G. H., Chien, S. C., & Sun, S. W. (2006). Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 37-40). [4017017] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.250992