Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters

Sheng-Di Lin; C. P. Lee

doi:10.1063/1.1543631

Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters

Sheng-Di Lin^*, C. P. Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.

Original language	English
Pages (from-to)	2952-2956
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1543631
State	Published - 1 Mar 2003

Access to Document

10.1063/1.1543631

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters'. Together they form a unique fingerprint.

Cite this

@article{0bc44bc5e6234bb395281f8f0c4e3e0a,

title = "Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters",

abstract = "Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.",

author = "Sheng-Di Lin and Lee, {C. P.}",

year = "2003",

month = mar,

day = "1",

doi = "10.1063/1.1543631",

language = "English",

volume = "93",

pages = "2952--2956",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters

AU - Lin, Sheng-Di

AU - Lee, C. P.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.

AB - Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.

UR - http://www.scopus.com/inward/record.url?scp=0037349821&partnerID=8YFLogxK

U2 - 10.1063/1.1543631

DO - 10.1063/1.1543631

M3 - Article

AN - SCOPUS:0037349821

VL - 93

SP - 2952

EP - 2956

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -