Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters

Sheng-Di Lin*, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.

Original languageEnglish
Pages (from-to)2952-2956
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
StatePublished - 1 Mar 2003

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