Abstract
Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes was investigated. The diodes were having InGaAs quantum well emitters. The negative differential resistances (NDRs) were observed in the quantum dots. It was concluded that NDRs come from the resonant tunneling effect.
Original language | English |
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Pages (from-to) | 2952-2956 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 5 |
DOIs | |
State | Published - 1 Mar 2003 |