Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

Gwong Liang Chen*, David M.T. Kuo, Wai Ting Lai, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes.

Original languageEnglish
Article number475402
JournalNanotechnology
Volume18
Issue number47
DOIs
StatePublished - 28 Nov 2007

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