Tunneling gate oxide approach to ultra-high current drive in small-geometry MOSFETs

Hisayo Sasaki Momose*, Mizuki Ono, Takashi Yoshitomi, Tatsuya Ohguro, Shin ichi Nakamura, Masanobu Saito, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

126 Scopus citations


Ultra-high performance n-MOSFETs were fabricated with a tunneling gate oxide 1.5 nm thick. It was found that these devices operate well when the gate length is around 0.1 μm, because gate leakage current falls in proportional to the gate length and the drain current increases in inverse proportion. A very high drivability of 1.1 mA/μm at 1.5 V was obtained, even in devices with a 0.14 μm gate length. A record high transconductance, 1,010 mS/mm at room temperature was also obtained in 0.09 μm MOSFETs. Confirmation was obtained that hot-carrier reliability improves as the gate oxide thickness is reduced, even in the 1.5 nm case. High current drive at the low supply voltage of 0.5 V was also demonstrated. We made clear that the very high performance is obtained in Si MOSFETs, if we can use a high capacitance gate insulator. In future devices, the tunnel gate oxide may be a good candidate for such a gate film, depending upon their applications.

Original languageEnglish
Pages (from-to)593-596
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 11 Dec 199414 Dec 1994

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