Ultra-high performance n-MOSFETs were fabricated with a tunneling gate oxide 1.5 nm thick. It was found that these devices operate well when the gate length is around 0.1 μm, because gate leakage current falls in proportional to the gate length and the drain current increases in inverse proportion. A very high drivability of 1.1 mA/μm at 1.5 V was obtained, even in devices with a 0.14 μm gate length. A record high transconductance, 1,010 mS/mm at room temperature was also obtained in 0.09 μm MOSFETs. Confirmation was obtained that hot-carrier reliability improves as the gate oxide thickness is reduced, even in the 1.5 nm case. High current drive at the low supply voltage of 0.5 V was also demonstrated. We made clear that the very high performance is obtained in Si MOSFETs, if we can use a high capacitance gate insulator. In future devices, the tunnel gate oxide may be a good candidate for such a gate film, depending upon their applications.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1994|
|Event||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 11 Dec 1994 → 14 Dec 1994