Tunneling current through MIS structures with ultra-thin insulators

H. Fujioka*, H. J. Wann, D. G. Park, Y. C. King, Y. F. Chyan, M. Oshima, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Leakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14-30 angstroms) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can be also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

Original languageEnglish
Pages (from-to)415-420
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume428
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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