Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Svette Reina Merden Santiago, Septem P. Caigas, Tzu Neng Lin, Chi Tsu Yuan, Ji Lin Shen, Ching Hsueh Chiu, Hao-Chung Kuo

Research output: Contribution to journalArticle

Abstract

We propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS2-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel-Kramers-Brillouin model, confirming the mechanism of the tunnel injection between WS2 QDs and InGaN QWs.

Original languageEnglish
Pages (from-to)15399-15404
Number of pages6
JournalRSC Advances
Volume8
Issue number28
DOIs
StatePublished - 1 Jan 2018

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    Santiago, S. R. M., Caigas, S. P., Lin, T. N., Yuan, C. T., Shen, J. L., Chiu, C. H., & Kuo, H-C. (2018). Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells. RSC Advances, 8(28), 15399-15404. https://doi.org/10.1039/c7ra13108a