Tunnel field effect transistor with raised germanium source

Sung Hwan Kim, Sapan Agarwal, Zachery A. Jacobson, Peter Matheu, Chen-Ming Hu, Tsu Jae King Liu

Research output: Contribution to journalArticlepeer-review

110 Scopus citations


The performance of a tunnel field effect transistor (TFET) with a raised germanium (Ge) source region is investigated via 2-D device simulation with a tunneling model calibrated to experimental data. The comparison of various Ge-source TFET designs shows that a fully elevated Ge-source design provides for the steepest subthreshold swing and, therefore, the largest on-state drive current for low-voltage operation. Mixed-mode (dc and ac) simulations are used to assess the energy-delay performance. In comparison with a MOSFET, an optimized Ge-source TFET is projected to provide for a lower energy per operation for throughput in the frequency range of up to ∼1 GHz for sub-0.5-V operation.

Original languageEnglish
Article number5559328
Pages (from-to)1107-1109
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Oct 2010


  • Band-to-band tunneling (BTBT)
  • germanium (Ge) source
  • raised source
  • tunnel field effect transistor (TFET)

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