Tuning the energy levels of self-assembled inas quantum dots by rapid thermal annealing

T. M. Hsu*, Y. S. Lan, Wen-Hao Chang, N. T. Yeh, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter.

Original languageEnglish
Pages (from-to)691-693
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number6
DOIs
StatePublished - 7 Feb 2000

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