Organic bistable devices with an Al/Alq3/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq3/n-type Si structure is primarily caused by the interface defects at the Al/Alq3 junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq3 thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq3 thin film and Alq3/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics.
- Organic bistable device