Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film

Po-Tsung Lee, Tzu Yueh Chang*, Szu Yuan Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Organic bistable devices with an Al/Alq3/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq3/n-type Si structure is primarily caused by the interface defects at the Al/Alq3 junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq3 thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq3 thin film and Alq3/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics.

Original languageEnglish
Pages (from-to)916-920
Number of pages5
JournalOrganic Electronics
Volume9
Issue number5
DOIs
StatePublished - 1 Jan 2008

Keywords

  • Alq
  • Organic bistable device

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