Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

X. F. Wang, Ming Fu Li, C. Ren, X. F. Yu, C. Shen, H. H. Ma, Albert Chin, C. X. Zhu, Jiang Ning, M. B. Yu, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Using a novel HfLaO gale dielectric for nMOSFETs with different La composition, we report for the first time that TaN (or HfN) effective metal gate work function can be tuned from Si mid-gap to the conduction band to fit the requirement of nMOSFETs. This is explained by the change of interface states and Fermi pinning level by adding La into HfO2. The superior performances of the nMOSFETs compared with those using pure HfO2gate dielectric are also reported, in terms of higher crystallization temperature and higher drive current Id without sacrifice of very low gate leakage current, i.e. 5-6 orders reduction compared with SIO2at the same equivalent oxide thickness of ~1.2-1.8 nm.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages366-368
Number of pages3
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

Keywords

  • HfLaO
  • High-k dielectric
  • MOSFET
  • Metal gate

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