Tungsten-platinum alloy Schottky barriers on n-type GaAs

T. Okumura*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Alloys of tungsten and platinum were studied as a Schottky contact material on n-type GaAs. Schottky barrier heights for two alloy compositions, W 50Pt50 and W8 0Pt20, were measured by current-voltage, capacitance-voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350°C for 20 h. However, the value from the I-V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt2 0 alloy on GaAs.

Original languageEnglish
Pages (from-to)42-44
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number1
DOIs
StatePublished - 1 Dec 1985

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