TUNGSTEN DISILICIDE FORMATION IN CODEPOSITED AMORPHOUS WSi//x ALLOY THIN FILMS.

F. Nava; B. Z. Weiss; K. Ahn; King-Ning Tu

TUNGSTEN DISILICIDE FORMATION IN CODEPOSITED AMORPHOUS WSi//x ALLOY THIN FILMS.

F. Nava^*, B. Z. Weiss, K. Ahn, King-Ning Tu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

The deposition and characterization of tungsten silicide has been the subject of a number of investigations. In all cases investigated, WSi//2 films, when undergone to a heat treatment, crystallize first in the hexagonal structure and show a maximum in the room-temperature resistivity for annealing temperatures between 500 and 600 degree C. To inquire into this problem, WSi//x thin films were formed with various compositions and thicknesses so that the electrical behavior and the kinetic of crystallization of the hexagonal phase could be investigated in detail. Results on the amorphous-crystalline transformation and on electric resistivity measurements are presented and discussed.

Original language	English
Pages	225-228
Number of pages	4
State	Published - 1 Mar 1987
Event	Journ Eur d'Etud sur les Met Refract et les Siliciures - Aussois, Fr Duration: 24 Mar 1987 → 26 Mar 1987

Conference

Conference	Journ Eur d'Etud sur les Met Refract et les Siliciures
City	Aussois, Fr
Period	24/03/87 → 26/03/87

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@conference{139cc7061a6c4a6eab1269cf6cc16c0a,

title = "TUNGSTEN DISILICIDE FORMATION IN CODEPOSITED AMORPHOUS WSi//x ALLOY THIN FILMS.",

abstract = "The deposition and characterization of tungsten silicide has been the subject of a number of investigations. In all cases investigated, WSi//2 films, when undergone to a heat treatment, crystallize first in the hexagonal structure and show a maximum in the room-temperature resistivity for annealing temperatures between 500 and 600 degree C. To inquire into this problem, WSi//x thin films were formed with various compositions and thicknesses so that the electrical behavior and the kinetic of crystallization of the hexagonal phase could be investigated in detail. Results on the amorphous-crystalline transformation and on electric resistivity measurements are presented and discussed.",

author = "F. Nava and Weiss, {B. Z.} and K. Ahn and King-Ning Tu",

year = "1987",

month = mar,

day = "1",

language = "English",

pages = "225--228",

note = "null ; Conference date: 24-03-1987 Through 26-03-1987",

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TY - CONF

T1 - TUNGSTEN DISILICIDE FORMATION IN CODEPOSITED AMORPHOUS WSi//x ALLOY THIN FILMS.

AU - Nava, F.

AU - Weiss, B. Z.

AU - Ahn, K.

AU - Tu, King-Ning

PY - 1987/3/1

Y1 - 1987/3/1

N2 - The deposition and characterization of tungsten silicide has been the subject of a number of investigations. In all cases investigated, WSi//2 films, when undergone to a heat treatment, crystallize first in the hexagonal structure and show a maximum in the room-temperature resistivity for annealing temperatures between 500 and 600 degree C. To inquire into this problem, WSi//x thin films were formed with various compositions and thicknesses so that the electrical behavior and the kinetic of crystallization of the hexagonal phase could be investigated in detail. Results on the amorphous-crystalline transformation and on electric resistivity measurements are presented and discussed.

AB - The deposition and characterization of tungsten silicide has been the subject of a number of investigations. In all cases investigated, WSi//2 films, when undergone to a heat treatment, crystallize first in the hexagonal structure and show a maximum in the room-temperature resistivity for annealing temperatures between 500 and 600 degree C. To inquire into this problem, WSi//x thin films were formed with various compositions and thicknesses so that the electrical behavior and the kinetic of crystallization of the hexagonal phase could be investigated in detail. Results on the amorphous-crystalline transformation and on electric resistivity measurements are presented and discussed.

UR - http://www.scopus.com/inward/record.url?scp=0023312170&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0023312170

SP - 225

EP - 228

Y2 - 24 March 1987 through 26 March 1987

ER -