Abstract
The deposition and characterization of tungsten silicide has been the subject of a number of investigations. In all cases investigated, WSi//2 films, when undergone to a heat treatment, crystallize first in the hexagonal structure and show a maximum in the room-temperature resistivity for annealing temperatures between 500 and 600 degree C. To inquire into this problem, WSi//x thin films were formed with various compositions and thicknesses so that the electrical behavior and the kinetic of crystallization of the hexagonal phase could be investigated in detail. Results on the amorphous-crystalline transformation and on electric resistivity measurements are presented and discussed.
| Original language | English |
|---|---|
| Pages | 225-228 |
| Number of pages | 4 |
| State | Published - 1 Mar 1987 |
| Event | Journ Eur d'Etud sur les Met Refract et les Siliciures - Aussois, Fr Duration: 24 Mar 1987 → 26 Mar 1987 |
Conference
| Conference | Journ Eur d'Etud sur les Met Refract et les Siliciures |
|---|---|
| City | Aussois, Fr |
| Period | 24/03/87 → 26/03/87 |
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Nava, F., Weiss, B. Z., Ahn, K., & Tu, K-N. (1987). TUNGSTEN DISILICIDE FORMATION IN CODEPOSITED AMORPHOUS WSi//x ALLOY THIN FILMS.. 225-228. Paper presented at Journ Eur d'Etud sur les Met Refract et les Siliciures, Aussois, Fr, .