Tunable photonic band gap in a doped semiconductor photonic crystal in near infrared region

C. J. Wu*, Y. C. Hsieh, Heng-Tung Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In this work, we theoretically investigate the tunable photonic band gap (PBG) in a semiconductor-dielectric photonic crystal made of highly doped n-type silicon (Si) layers alternating with silicon oxide layers. The tunable characteristic is studied by changing the donor impurity concentration in Si layer. The PBG is numerically analyzed in the near infrared frequency region from the reflectance calculated by the transfer matrix method. The of filling factor in Si layer on the photonic band gap is also illustrated. These tunable properties in such a photonic crystal provide some information that could be of technical use to the semiconductor optoelectronics, especially in communication applications.

Original languageEnglish
Pages (from-to)271-283
Number of pages13
JournalProgress in Electromagnetics Research
Volume114
DOIs
StatePublished - 1 Jan 2011

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