Tunable insulator-quantum Hall transition in a weakly interacting two-dimensional electron system

Shun-Tsung Lo, Yi Ting Wang, Sheng-Di Lin, Gottfried Strasser, Jonathan P. Bird, Yang Fang Chen, Chi Te Liang*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have performed low-temperature measurements on a gated two-dimensional electron system in which electron-electron (e-e) interactions are insignificant. At low magnetic fields, disorder-driven movement of the crossing of longitudinal and Hall resistivities (ρxx and ρxy) can be observed. Interestingly, by applying different gate voltages, we demonstrate that such a crossing at ρxx ∼ ρxy can occur at a magnetic field higher, lower, or equal to the temperature-independent point in ρxx which corresponds to the direct insulator-quantum Hall transition. We explicitly show that ρxx ∼ ρxy occurs at the inverse of the classical Drude mobility 1/μD rather than the crossing field corresponding to the insulator-quantum Hall transition. Moreover, we show that the background magnetoresistance can affect the transport properties of our device significantly. Thus, we suggest that great care must be taken when calculating the renormalized mobility caused by e-e interactions.

Original languageEnglish
Pages (from-to)1-11
Number of pages11
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 13 Aug 2013

Keywords

  • Direct insulator-quantum hall transition
  • Electrons
  • Hall effect
  • Magnetoresistance

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