Tc enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa2Cu3O7 thin films

Sergey K. Tolpygo*, Jiunn-Yuan Lin, M. Gurvitch, S. Y. Hou, Julia M. Phillips

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The effect of electron irradiation with incident energy (E ≤ 40 keV) lower than the threshold for displacement of in-plane atoms on Tc, resistivity and Hall coefficient has been studied on fully oxygenated YBa2Cu3O7-δ tin films. In contrast to the known Tc suppression at high-energy particle irradiation, an increase in Tc has been found as well as a factor of two increase in both the T-linear resistivity slope and the Hall coefficient as a function of radiation fluence. It has been shown that the changes observed in transport properties can be explained as being caused by disruption of the conductivity of CuO chains by radiation-induced chain oxygen defects.

Original languageEnglish
Pages (from-to)207-219
Number of pages13
JournalPhysica C: Superconductivity and its applications
Volume269
Issue number3-4
DOIs
StatePublished - 1 Oct 1996

Keywords

  • Electrical resistivity
  • Hall effect
  • Irradiation effect
  • Normal-state properties
  • Thin films

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