Triplet-to-Singlet Exciton Formation in poly([Formula presented]-phenylene-vinylene) Light-Emitting Diodes

L. C. Lin, Hsin-Fei Meng*, J. T. Shy, S. F. Horng, L. S. Yu, C. H. Chen, H. H. Liaw, C. C. Huang, K. Y. Peng, S. A. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

The triplet to singlet exciton formation ratio in a MEH-PPV light-emitting diode is measured by comparing the triplet-induced absorptions with optical and electric excitations at the same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-independent value 3 at intermediate field but is reduced to about 2 for higher field.

Original languageEnglish
Number of pages1
JournalPhysical Review Letters
Volume90
Issue number3
DOIs
StatePublished - 1 Jan 2003

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