Triplet exciton formation ratio in poly (p-phenylene-vinylene) light-emitting diode

L. C. Lin, Hsin-Fei Meng*, J. T. Shy, S. F. Horng, L. S. Yu, C. H. Chen, H. H. Liaw, C. C. Huang, G. Y. Peng, S. A. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The triplet to singlet exciton formation ratio in a poly(2-methoxy- 5(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) light-emitting-diode is measured by comparing the triplet induced-absorptions with optical and electric excitations at same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-statistics value 3 at intermediate field but is reduced to about 1 for higher field.

Original languageEnglish
Pages (from-to)425-426
Number of pages2
JournalSynthetic Metals
Volume135-136
DOIs
StatePublished - 4 Apr 2003

Keywords

  • Light-emitting-diode
  • Triplet exciton

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    Lin, L. C., Meng, H-F., Shy, J. T., Horng, S. F., Yu, L. S., Chen, C. H., Liaw, H. H., Huang, C. C., Peng, G. Y., & Chen, S. A. (2003). Triplet exciton formation ratio in poly (p-phenylene-vinylene) light-emitting diode. Synthetic Metals, 135-136, 425-426. https://doi.org/10.1016/S0379-6779(02)00517-9