Triplet exciton formation and decay in polyfluorene light-emitting diodes

H. H. Liao, Hsin-Fei Meng*, S. F. Horng, J. T. Shy, K. Chen, Chain-Shu Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We study the triplet excitons in poly (9,9-dioctylfluorene-2,7-diyl) light-emitting diode using infrared induced absorption. The infrared absorption is exclusively due to the triplet excitons and there is no spectral overlap with any other species. A strong suppression of the triplet exciton density relative to the singlet by voltage is observed. Through an unique independent measurement on the triplet exciton lifetime it is shown that the suppression solely comes from triplet exciton quenching by current injection. The triplet-to-singlet exciton formation ratio is independent of voltage as well as temperature, implying a spin-independent exciton formation.

Original languageEnglish
Article number113203
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - 15 Sep 2005

Fingerprint Dive into the research topics of 'Triplet exciton formation and decay in polyfluorene light-emitting diodes'. Together they form a unique fingerprint.

Cite this