Trigate TiN nanocrystal memory with high-k blocking dielectric and high work function gate electrode

Chi Pei Lu*, Bing-Yue Tsui, Cheng Kei Luo, Cha Hsin Lin, Pei Jer Tzeng, Ching Chiun Wang, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this work, high-performance TiN metal nanocrystal nonvolatile memories using a p+ poly-Si gate and a Al2 O3 blocking dielectric layer with trigate structure are fabricated on silicon-on-insulator substrate. Devices with moderate transistor performance and superior memory properties are demonstrated. A memory window as high as 5 V is achieved after Program/Ease (P/E) operation at ±10 V for 0.1 s, with only 18 and 33% charge loss at room temperature and at 85°C after 10 years storage. Only +0.5 V window shift and almost no window narrowing after 105 P/E operations can be obtained. Furthermore, a device with larger nanocrystals has better P/E characteristics and superior retention performance.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number3
DOIs
StatePublished - 19 Jan 2009

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