Triangular extended microtunnels in gan prepared by selective crystallographic wet chemical etching

Hsin Hsiung Huang*, Pei Lun Wu, Hung Yu Zeng, Po Chun Liu, Tung Wei Chi, Jenq Dar Tsay, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Extended microtunnels with triangular cross sections in thick GaN films were demonstrated using wet chemical etching on specially designed epitaxial lateral overgrowth structures. For tunnels along the 〈 11̄- 00 〉 and 〈 112̄- 0 〉 directions of GaN, the 〈 1122̄- - 〉 and 〈 10 1- 1- 〉 facets are the etch stop planes with activation energies of 23 kcal/mol determined by wet chemical etching. The axial etching rate of the tunnels in the 〈 11̄- 00 〉 direction is twice as large than that along the 〈 112̄- 0 〉 direction. The highest etching rate of the tunnels in the axial direction is 1000 μm/h.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number7
DOIs
StatePublished - 2 Jun 2008

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