Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I on and nearly defect-free channels

Shu Han Hsu*, Hung Chih Chang, Chun Lin Chu, Yen Ting Chen, Wen Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po Jung Sung, Bo Yuan Chen, Guo Wei Huang, Guang Li Luo, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Due to the highest electron mobility (2200 cm2/Vs) on (111) Ge surface, the n-channel triangular Ge gate-all-around (GAA) FET with (111) sidewalls on Si and Lg=350 nm shows 2x enhanced Ion of 110 μA/μm at 1V with respect to the devices with near (110) sidewalls. A novel process to etch away the defective Ge near Ge/Si interface from epitaxial Ge grown on SOI achieves a nearly defect-free channel, good gate control triangular gate, and larger effective width. Electrostatic control of SS= 94 mV/dec (at 1V) can be further improved if superior gate stack than EOT= 5.5 nm and Dit= 1×1012 cm-2eV-1 is used. The Ion can be further enhanced if the line edge roughness (LER) can be reduced. The Ge GAA n-FET is reported for the first time with CMOS compatible process, which makes the circuits integration much easier.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 10 Dec 201213 Dec 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period10/12/1213/12/12

Fingerprint Dive into the research topics of 'Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I <sub>on</sub> and nearly defect-free channels'. Together they form a unique fingerprint.

Cite this