Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network: Si-cluster surrounded SiO 2 is quite unique

Watanabe Hiroshi*, Kenji Kawabata, Takashi Ichikawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A tight-binding method is applied to optimized Si-cluster surrounded by SiO2. As a result, it is found that the energy band structure is quite different from that of Si-substrate. It is regarded that the band-gap is invaded from the conduction band by intrinsic interfacial states.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
StatePublished - 1 Dec 2009
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 9 Sep 200911 Sep 2009

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period9/09/0911/09/09

Keywords

  • Component
  • Floating-gate
  • Interfacial-states
  • Molecular-dynamics
  • Sidot
  • Tight-binding

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