In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl2/O2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl2/O2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - 1 Nov 2016|