TY - JOUR
T1 - Trenched 4H-SiC with tapered sidewall formed by Cl2/O2 reactive ion etching
AU - Tseng, Yuan Hung
AU - Tsui, Bing-Yue
PY - 2016/11/1
Y1 - 2016/11/1
N2 - In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl2/O2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl2/O2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation.
AB - In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl2/O2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl2/O2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation.
UR - http://www.scopus.com/inward/record.url?scp=84992391741&partnerID=8YFLogxK
U2 - 10.1116/1.4965421
DO - 10.1116/1.4965421
M3 - Article
AN - SCOPUS:84992391741
VL - 34
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SN - 0734-2101
IS - 6
M1 - 061305
ER -