Trenched 4H-SiC with tapered sidewall formed by Cl2/O2 reactive ion etching

Yuan Hung Tseng, Bing-Yue Tsui

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1 Scopus citations


In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl2/O2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl2/O2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation.

Original languageEnglish
Article number061305
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
StatePublished - 1 Nov 2016

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