Trench gate power MOSFETs with retrograde body profile

Bing-Yue Tsui*, Ming Da Wu, Tian Choy Gan, Hui Hua Chou, Zhi Liang Wu, Ching Tzong Sune

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

Low specific on-resistance (Rds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

Original languageEnglish
Pages213-216
Number of pages4
StatePublished - 18 Oct 2004
EventProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan
Duration: 24 May 200427 May 2004

Conference

ConferenceProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
CountryJapan
CityKitakyushu
Period24/05/0427/05/04

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    Tsui, B-Y., Wu, M. D., Gan, T. C., Chou, H. H., Wu, Z. L., & Sune, C. T. (2004). Trench gate power MOSFETs with retrograde body profile. 213-216. Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan.