Traps in molecular-beam epitaxial In0.53(GaxAl 1-x)0.47As/InP

Dipankar Biswas*, Albert Chin, Jagadeesh Pamulapati, Pallab Bhattacharya

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Deep-level transient spectroscopy measurements have been made on molecular-beam epitaxial In0.53(GaxAl1-x) 0.47As lattice matched to InP. Several electron and hole traps, with activation energies ranging from 0.14 to 0.79 eV, have been identified and characterized. In particular, systems of electron traps (0.30≤ΔE T≤0.79 eV) and hole traps (0.14≤ΔET≤0.31 eV) with monotonically changing activation energies have been identified in these alloys. We believe these traps are dominant in this alloy system.

Original languageEnglish
Pages (from-to)2450-2453
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number5
DOIs
StatePublished - 1 Dec 1990

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