Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics

Wei Liang Lin*, Jen Chung Lou, Yao Jen Lee, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

DNBTI on Hf02 and HfSiON has been investigated. The DNBTI model under NBTIIpassivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.

Original languageEnglish
Title of host publicationProceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages122-125
Number of pages4
DOIs
StatePublished - 16 Nov 2009
Event2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China
Duration: 6 Jul 200910 Jul 2009

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
CountryChina
CitySuzhou
Period6/07/0910/07/09

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