Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor

You Tai Chang*, Yueh Lin Tsai, Kang Ping Peng, Chun Jung Su, Pei Wen Li, Horng Chih Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, we investigate the four-level random telegraph noise (RTN) characteristics of a gate-all-around (GAA) nanowire (NW) transistor. The RTN-testing devices were fabricated with the sidewall spacer etching technique. The effective channel length and width are approximately 150 and 30 nm, respectively. By decoupling the four-level RTN, we are able to extract the time constants associated with the two traps. Circle-shaped approximations are used to mimic the triangular NW for evaluating the depths of the traps. The extracted depths of the two traps are very close to each other, which is consistent with the time-evolution measured results. We've also explored the probabilities of transitions between two specific current levels in the RTN characteristics, as well as the relative trapping/de-trapping frequencies.

Original languageEnglish
Article number9072291
Pages (from-to)338-343
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume19
DOIs
StatePublished - 2020

Keywords

  • gate-all-around (GAA)
  • multi-level RTN
  • poly-Si nanowire transistors
  • Random telegraph noise (RTN)
  • relative trapping/de-trapping frequency
  • transition probability

Fingerprint Dive into the research topics of 'Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor'. Together they form a unique fingerprint.

Cite this