Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

Banani Sen, Hei Wong*, J. Molina, H. Iwai, J. A. Ng, K. Kakushima, C. K. Sarkar

*Corresponding author for this work

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

By measuring the current-voltage and capacitance-voltage characteristics of thin La2O3 film at several different temperatures ranging from 100 to 400 K and after constant-voltage stressing at different durations, we reveal the existence of a shallow electron trap with energy of about 0.19 eV below the conduction band edge of La2O3. This kind of trap is involved in the thermal-assisted Poole-Frenkel tunneling through the dielectric layer. Significant charge trapping and detrapping are found in samples annealed in nitrogen at 400 °C. The charge trapping-detrapping events are attributed to the oxygen vacancies with activation energy of 0.332 eV, which is assigned to the relaxation between the charging states of the O-vacancies. The trapping characteristics of samples annealed at 600 °C are greatly improved as a consequence of O-vacancy removal and formation of interfacial silicon oxide layer.

Original languageEnglish
Pages (from-to)475-480
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number3
DOIs
StatePublished - Mar 2007

Keywords

  • High-κ dielectric
  • LaO
  • Rare earth oxide
  • Trapping characteristics

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