Trapping and detrapping of oxide border traps in Al2O3 gate dielectric in MoS2 n-MOSFETs under PBTI stress

Hui Wen Yuan, Hui Shen, Jun Jie Li, Jinhai Shao, Daming Huang, Yi Fang Chen, P. F. Wang, S. J. Ding, Albert Chin, Ming Fu Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we report the positive bias temperature instability (PBTI) effects of the back-gated MoS2 n-MOSFET with Al2O3 gate dielectric. Multilayer MoS2 was used and all measurements are carried in vacuum to avoid the electric signal contamination by the top MoS2 surface water or oxygen molecules absorption. In the stress phase, the Id-Vg curve shifts to the positive gate bias direction. In the recovery phase, the Id-Vg shifts back completely to the fresh device curve. This indicates that voltage shift is purely due to trapping or detrapping of the oxide border traps at the MoS2/Al2O3 interface and no new traps are generated during the stress time. When applying different stress voltage and measuring the Id-Vg shift, we can calculate the oxide border trap energy density Ξ(E), which has a peak value of 6×1013cm-2eV-1 at 0.035eV above EC of MoS2 conduction band.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages481-483
Number of pages3
ISBN (Electronic)9781467397179
DOIs
StatePublished - 31 Jul 2017
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 25 Oct 201628 Oct 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
CountryChina
CityHangzhou
Period25/10/1628/10/16

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