Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics

Wei Liang Lin*, Yao Jen Lee, Wen Cheng Lo, King Sheng Chen, Y. T. Hou, K. C. Lin, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics.

Original languageEnglish
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 23 Sep 2008
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: 7 Jul 200811 Jul 2008

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
CountrySingapore
CitySingapore
Period7/07/0811/07/08

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