Transportation model establishment of InGaZnO for thin film transistor device application

Li Feng Teng*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.

Original languageEnglish
Pages1845-1847
Number of pages3
StatePublished - 1 Dec 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period1/12/103/12/10

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  • Cite this

    Teng, L. F., Liu, P-T., Chou, Y. T., & Fan, Y. S. (2010). Transportation model establishment of InGaZnO for thin film transistor device application. 1845-1847. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.