Transport properties of single vanadium oxide nanowire

Kien-Wen Sun

doi:10.1016/j.phpro.2011.11.004

Transport properties of single vanadium oxide nanowire

Kien-Wen Sun^*

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600 K in order to obtain nanodevices. Measurements were taken on a single V₂O₅ nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V ₂O₅ to VO₂/V₂O₃ phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.

Original language	English
Pages (from-to)	8-13
Number of pages	6
Journal	Physics Procedia
Volume	22
DOIs	https://doi.org/10.1016/j.phpro.2011.11.004
State	Published - 2011
Event	2011 1st International Conference on Physics Science and Technology, ICPST 2011 - Hong Kong, China Duration: 12 Dec 2011 → 13 Dec 2011

Keywords

Dielectrophoresis
Metal oxide
Nanowire
Phase transition

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title = "Transport properties of single vanadium oxide nanowire",

abstract = "We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600 K in order to obtain nanodevices. Measurements were taken on a single V2O5 nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V 2O5 to VO2/V2O3 phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.",

keywords = "Dielectrophoresis, Metal oxide, Nanowire, Phase transition",

author = "Kien-Wen Sun",

year = "2011",

doi = "10.1016/j.phpro.2011.11.004",

language = "English",

volume = "22",

pages = "8--13",

journal = "Physics Procedia",

issn = "1875-3884",

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note = "null ; Conference date: 12-12-2011 Through 13-12-2011",

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T1 - Transport properties of single vanadium oxide nanowire

AU - Sun, Kien-Wen

PY - 2011

Y1 - 2011

N2 - We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600 K in order to obtain nanodevices. Measurements were taken on a single V2O5 nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V 2O5 to VO2/V2O3 phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.

AB - We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600 K in order to obtain nanodevices. Measurements were taken on a single V2O5 nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V 2O5 to VO2/V2O3 phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.

KW - Dielectrophoresis

KW - Metal oxide

KW - Nanowire

KW - Phase transition

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DO - 10.1016/j.phpro.2011.11.004

M3 - Conference article

AN - SCOPUS:84856939355

VL - 22

SP - 8

EP - 13

JO - Physics Procedia

JF - Physics Procedia

SN - 1875-3884

Y2 - 12 December 2011 through 13 December 2011

ER -

Transport properties of single vanadium oxide nanowire

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Keywords

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