Transparent Ga 2 O 3 Photodetectors for Harsh Optoelectronics

Tzu Chiao Wei, Dung Sheng Tsai, Parvaneh Ravadgar, Jr Jian Ke, Meng Lin Tsai, Der-Hsien Lien, Chiung Yi Huang, Ray-Hua Horng, Jr Hau He

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

We fabricate fully transparent solar-blind DUV PD devices employing β-Ga2O3 as an active layer and indium zinc oxide (IZO) as the transparent electrodes, exhibiting the average transmittance up to 80% from visible to near IR wavelength region without image blurring. The β-Ga2O3 MSM PDs for the use in harsh environments show a very low dark current (~1 nA), no sign of breakdown even at a bias higher than 200 V, excellent thermal stability, and intrinsic solar blindness. The dark current of β-Ga2O3 MSM PDs under significantly different oxygen concentration in the ambiences is similar, indicating that the high inertness to surface effect due to superior crystallinity nature of β-Ga2O3. The working temperature is up to 700 K and the responsivity is 0.32 mA/W at 10 V bias under 185-nm illumination. β-Ga2O3 PDs can be fully recovered after 700-K operation, showing excellent thermal reliability and robustness. The intriguing optoelectronic and electrical properties of β-Ga2O3 promise a new generation of stable, solar-blind DUV PDs for the extremely harsh electronic applications, such as sensing, imaging, and intrachip optical interconnects in high-temperature environments.
Original languageEnglish
Title of host publicationECS Meeting Abstracts
Place of PublicationMexico
VolumeMA2014-02, 2014
StatePublished - Oct 2014
Event2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico, Cancun, Mexico
Duration: 5 Oct 20149 Oct 2014

Conference

Conference2014 ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period5/10/149/10/14

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