Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

Kow-Ming Chang; Sung Hung Huang; Chin Jyi Wu; Wei Li Lin; Wei Chiang Chen; Chia Wei Chi; Je Wei Lin; Chia Chiang Chang

doi:10.1016/j.tsf.2011.01.156

Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

Kow-Ming Chang, Sung Hung Huang^*, Chin Jyi Wu, Wei Li Lin, Wei Chiang Chen, Chia Wei Chi, Je Wei Lin, Chia Chiang Chang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 × 10^{- 3} Ω cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 °C in open air, and average transmittance in the visible region was more than 80%.

Original language	English
Pages (from-to)	5114-5117
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2011.01.156
State	Published - 31 May 2011

Keywords

Atmospheric-pressure plasma
Indium nitrate
Indium-doped zinc oxide
Transparent conductive oxide
Zinc nitrate

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title = "Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet",

abstract = "Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 × 10- 3 Ω cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 °C in open air, and average transmittance in the visible region was more than 80%.",

keywords = "Atmospheric-pressure plasma, Indium nitrate, Indium-doped zinc oxide, Transparent conductive oxide, Zinc nitrate",

author = "Kow-Ming Chang and Huang, {Sung Hung} and Wu, {Chin Jyi} and Lin, {Wei Li} and Chen, {Wei Chiang} and Chi, {Chia Wei} and Lin, {Je Wei} and Chang, {Chia Chiang}",

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T1 - Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

AU - Chang, Kow-Ming

AU - Huang, Sung Hung

AU - Wu, Chin Jyi

AU - Lin, Wei Li

AU - Chen, Wei Chiang

AU - Chi, Chia Wei

AU - Lin, Je Wei

AU - Chang, Chia Chiang

PY - 2011/5/31

Y1 - 2011/5/31

N2 - Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 × 10- 3 Ω cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 °C in open air, and average transmittance in the visible region was more than 80%.

AB - Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 × 10- 3 Ω cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 °C in open air, and average transmittance in the visible region was more than 80%.

KW - Atmospheric-pressure plasma

KW - Indium nitrate

KW - Indium-doped zinc oxide

KW - Transparent conductive oxide

KW - Zinc nitrate

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