Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

Kow-Ming Chang, Sung Hung Huang*, Chin Jyi Wu, Wei Li Lin, Wei Chiang Chen, Chia Wei Chi, Je Wei Lin, Chia Chiang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 × 10- 3 Ω cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 °C in open air, and average transmittance in the visible region was more than 80%.

Original languageEnglish
Pages (from-to)5114-5117
Number of pages4
JournalThin Solid Films
Volume519
Issue number15
DOIs
StatePublished - 31 May 2011

Keywords

  • Atmospheric-pressure plasma
  • Indium nitrate
  • Indium-doped zinc oxide
  • Transparent conductive oxide
  • Zinc nitrate

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