Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy

Chun Hao Ma, Jie Jiang, Pao Wen Shao, Qiang Xiang Peng, Chun Wei Huang, Ping Chun Wu, Jyun Ting Lee, Yu Hong Lai, Din Ping Tsai, Jyh Ming Wu, Shen Chuan Lo, Wen-Wei Wu, Yi Chun Zhou, Po Wen Chiu*, Ying-hao Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy. A direct fabrication of epitaxial lead lanthanum zirconate titanate on transparent flexible mica substrate with indium tin oxide electrodes is presented. The transparent flexible ferroelectric heterostructures not only retain their superior performance, thermal stability, reliability, and mechanical durability, but also exhibit remarkably robust properties against to a strong radiation exposure. Our study demonstrates an extraordinary concept to realize transparent flexible nonvolatile electronic devices for the design and development of next-generation smart devices with potential application in electronics, automotive, aerospace, and nuclear systems.

Original languageEnglish
Pages (from-to)30574-30580
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number36
DOIs
StatePublished - 12 Sep 2018

Keywords

  • PLZT
  • antiradiative
  • ferroelectric
  • flexible
  • mica
  • transparent
  • van der Waals epitaxy

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