Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy

Li Chang*, Tzer Shen Lin, Jiun Long Chen, Fu Rong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.

Original languageEnglish
Pages (from-to)3444-3446
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number26
DOIs
StatePublished - 4 Jun 1998

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