Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy

Sheng-Di Lin*, Z. C. Lin, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization.

Original languageEnglish
Article number054312
JournalJournal of Applied Physics
Volume100
Issue number5
DOIs
StatePublished - 26 Sep 2006

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