Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris*, Jin Yu Shiu, Chung Yu Lu, Niklas Rorsman, Herbert Zirath, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The microstructure of Si/Ti/Al/Ni/Au was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy. The dependence of the contact resistance on the silicon layer thickness and the temperature was correlated to the microstructure of the alloyed contacts. The enhancement of the contact resistance by inserting a 30 Å thick Si layer under the Ti/Al/Ni/Au metallization was attributed to diffusion of the contact into the AlGaN layer. Increasing the Si thickness and or the temperature resulted in the formation of Gold (Au)-based silicides, which prevent the formation of low interfacial TiN or AlN layers.

Original languageEnglish
Article number034904
JournalJournal of Applied Physics
Volume100
Issue number3
DOIs
StatePublished - 23 Aug 2006

Fingerprint Dive into the research topics of 'Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures'. Together they form a unique fingerprint.

  • Cite this