We have fabricated a Ti/ TiO2 /Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/ TiO2 (0.13 eV) and the TiO2 /Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO2 filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface barriers at forming. The rectification stable up to 125°C and 103 cycles under ±3 V sweep without interference with resistive-switching shows satisfactory reliability of TiO2 diodes for one diode-one resistor memory devices.