Transient simulation of EPROM writing characteristics, with a novel hot electron injection model

Chimoon Huang*, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the two injection mechanisms, thermionic emission and quantum tunneling; is evaluated.

Original languageEnglish
Pages (from-to)461-464
Number of pages4
JournalSolid State Electronics
Volume38
Issue number2
DOIs
StatePublished - 1 Jan 1995

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