Transient simulation of EPROM writing characteristics, with a novel hot electron injection model

Chimoon Huang; Ta-Hui Wang

doi:10.1016/0038-1101(94)00087-V

Transient simulation of EPROM writing characteristics, with a novel hot electron injection model

Chimoon Huang^*, Ta-Hui Wang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the two injection mechanisms, thermionic emission and quantum tunneling; is evaluated.

Original language	English
Pages (from-to)	461-464
Number of pages	4
Journal	Solid State Electronics
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/0038-1101(94)00087-V
State	Published - 1 Jan 1995

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title = "Transient simulation of EPROM writing characteristics, with a novel hot electron injection model",

abstract = "A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the two injection mechanisms, thermionic emission and quantum tunneling; is evaluated.",

author = "Chimoon Huang and Ta-Hui Wang",

year = "1995",

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doi = "10.1016/0038-1101(94)00087-V",

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AU - Wang, Ta-Hui

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N2 - A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the two injection mechanisms, thermionic emission and quantum tunneling; is evaluated.

AB - A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the two injection mechanisms, thermionic emission and quantum tunneling; is evaluated.

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U2 - 10.1016/0038-1101(94)00087-V

DO - 10.1016/0038-1101(94)00087-V

M3 - Article

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EP - 464

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

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Transient simulation of EPROM writing characteristics, with a novel hot electron injection model

Abstract

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