A positive oxide charge detrapping method induced substrate current in a Fowler/Nordheim (-FN) stressed n-MOSFET was investigated. The substrate current follows strictly a l/t time dependence. A correlation between the stress induced leakage current (SILC) and stress induced substrate current is observed. Results show that oxide plays an important role in the transient component of -FN SILC and in the dc component of +FN SILC. The stress created positive oxide charge can be annealed by substrate hot electron injection.