Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

Nian Kai Zous, Ta-Hui Wang, Chih Chich Yeh, C. W. Tsai, Chimoon Huang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A positive oxide charge detrapping method induced substrate current in a Fowler/Nordheim (-FN) stressed n-MOSFET was investigated. The substrate current follows strictly a l/t time dependence. A correlation between the stress induced leakage current (SILC) and stress induced substrate current is observed. Results show that oxide plays an important role in the transient component of -FN SILC and in the dc component of +FN SILC. The stress created positive oxide charge can be annealed by substrate hot electron injection.

Original languageEnglish
Pages (from-to)734-736
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number5
DOIs
StatePublished - 2 Aug 1999

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