Transient effects in floating body SOI NMOSFET's

Jacques Gautier*, Keith A. Jenkins, Jack Y.C. Sun

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

SOI technology is promising to extend bulk CMOS for digital applications. For that purpose, the packing density is key point, such that adding body ties is not considered for most of the SOI devices of digital circuits. The consequence of floating body operation is the existence of several phenomena, like the kink effect and supra ideal subthreshold slope. This paper reports the associated transient effects observed for fast gate pulses by high speed measurement and 2-D numerical simulations. It is indicated that, due to floating body operation, the drain current of SOI devices during fast switching is very different from the DC value. This must be taken into account for accurate simulation of circuits.

Original languageEnglish
Pages112-113
Number of pages2
StatePublished - 1995
EventProceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA
Duration: 3 Oct 19955 Oct 1995

Conference

ConferenceProceedings of the 1995 IEEE International SOI Conference
CityTucson, AZ, USA
Period3/10/955/10/95

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