Transient effect assisted NBTI degradation in p-channel LTPS TFTs under dynamic stress

Chia Sheng Lin*, Ying Chung Chen, Ting Chang Chang, Hung Wei Li, Shih Ching Chen, Wei Che Hsu, Fu Yen Jian, Te Chih Chen, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This work investigates dynamic negative bias temperature instability (NBTI) in p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with different rise and fall times. Experimental results reveal identical increases in the interface state density (Nit) induced by different dynamic NBTI stress conditions. Nevertheless, the degradation of the grain boundary trap (Ntrap) becomes more significant as rise time decreases to 1 μs. Because the surface inversion layer cannot form during the short rise time, transient bulk voltage will cause excess holes to diffuse into the poly-Si bulk. Therefore, the significant Ntrap increase is assisted by this transient effect.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number1
DOIs
StatePublished - 1 Mar 2011

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