Transient device simulation of floating gate nonvolatile memory cell with a local trap

Watanabe Hiroshi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.

Original languageEnglish
Article number5484439
Pages (from-to)1873-1882
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume57
Issue number8
DOIs
StatePublished - 1 Aug 2010

Keywords

  • Coulomb oscillation
  • device modeling
  • device simulation
  • floating gate (FG)
  • local trap
  • memory
  • modeling
  • single-electron sensitivity
  • TCAD
  • trap-assisted tunneling

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