Transient current through a single germanium quantum dot

Wei Ting Lai, David M T Kuo, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We have experimentally investigated time-dependent charge transportation through a single germanium (Ge) quantum dot (QD), which weakly couples to adjacent semiconductor electrodes via SiO2 tunnel barriers, under a voltage pulse excitation at room temperature. The time-dependent current arises from a tunneling current through the Ge QD's resonant energy levels as well as displacement currents due to the charge accumulation or depletion within the QD. We find that the displacement current dominates in the pulse transition regimes, while the tunneling current dominates as the pulse reaches steady state. The charge absorption and emission processes are experimentally observed and theoretically analyzed.

Original languageEnglish
Pages (from-to)886-889
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume41
Issue number5
DOIs
StatePublished - 1 Mar 2009

Keywords

  • Germanium
  • Quantum dot
  • Resonant tunneling diode

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