Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 High-κ gate stack observed by using low-frequency charge pumping method

Wei Hao Wu*, Bing-Yue Tsui, Mao Chieh Chen, Yong Tian Hou, Yin Jin, Hun Jan Tao, Shih Chang Chen, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Compounds

Engineering & Materials Science