Transient Behavior of Subthreshold

F. Assaderaghi, J. Chen, P. K. Ko, Chen-Ming Hu, R. Solomon, T. Y. Chan

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFET's show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the above phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.

Original languageEnglish
Pages (from-to)518-520
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number10
DOIs
StatePublished - 1 Jan 1991

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