Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO 2 interface

J. R. Tsai*, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, Horng-Chih Lin, J. P. Lin, W. S. Feng, R. D. Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO 2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.

Original languageEnglish
Pages (from-to)979-982
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

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